BSS138LT1G 查看數據表（PDF） - ON Semiconductor
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BSS138LT1G Datasheet PDF : 5 Pages
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BSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C)
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
V(BR)DSS
50
IDSS
−
−
−
IGSS
−
−
−
Vdc
mAdc
−
0.1
−
0.5
−
5.0
−
±0.1
mAdc
VGS(th)
rDS(on)
gfs
0.5
−
−
5.6
−
−
100
−
1.5
Vdc
W
10
3.5
−
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Ciss
Coss
Crss
td(on)
td(off)
−
40
50
pF
−
12
25
−
3.5
5.0
−
−
20
ns
−
−
20
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