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MJE13009

12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS

ON Semiconductor 

MJE13009

APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS

INTRODUCTION

The primary considerations when selecting a power

transistor for SWITCHMODE applications are voltage and

current ratings, switching speed, and energy handling

capability. In this section, these specifications will be

discussed and related to the circuit examples illustrated in

Table 2. (Note 3)

VOLTAGE REQUIREMENTS

Both blocking voltage and sustaining voltage are

important in SWITCHMODE applications.

Circuits B and C in Table 2 illustrate applications that

require high blocking voltage capability. In both circuits the

switching transistor is subjected to voltages substantially

higher than VCC after the device is completely off (see load

line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking

capability at this point depends on the base to emitter

conditions and the device junction temperature. Since the

highest device capability occurs when the base to emitter

junction is reverse biased (VCEV), this is the recommended

and specified use condition. Maximum ICEV at rated VCEV

is specified at a relatively low reverse bias (1.5 V) both at

25°C and 100_C. Increasing the reverse bias will give some

improvement in device blocking capability.

The sustaining or active region voltage requirements in

switching applications occur during turn−on and turn−off. If

the load contains a significant capacitive component, high

current and voltage can exist simultaneously during turn−on

and the pulsed forward bias SOA curves (Figure 1) are the

proper design limits.

For inductive loads, high voltage and current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as a Reverse Bias Safe Operating Area

(Figure 2) which represents voltage−current conditions that

can be sustained during reverse biased turn−off. This rating

is verified under clamped conditions so that the device is

never subjected to an avalanche mode.

In the four application examples (Table 2) load lines are

shown in relation to the pulsed forward and reverse biased

SOA curves.

the output rectifiers, however, the voltage induced in the

primary leakage inductance is not clamped by these diodes

and could be large enough to destroy the device. A snubber

network or an additional clamp may be required to keep the

turn−off load line within the Reverse Bias SOA curve.

Load lines that fall within the pulsed forward biased SOA

curve during turn−on and within the reverse bias SOA curve

during turn−off are considered safe, with the following

assumptions:

1. The device thermal limitations are not exceeded.

2. The turn−on time does not exceed 10 ms (see standard

pulsed forward SOA curves in Figure 1).

3. The base drive conditions are within the specified

limits shown on the Reverse Bias SOA curve

(Figure 2).

CURRENT REQUIREMENTS

An efficient switching transistor must operate at the

required current level with good fall time, high energy

handling capability and low saturation voltage. On this data

sheet, these parameters have been specified at 8 amperes

which represents typical design conditions for these devices.

The current drive requirements are usually dictated by the

VCE(sat) specification because the maximum saturation

voltage is specified at a forced gain condition which must be

duplicated or exceeded in the application to control the

saturation voltage.

SWITCHING REQUIREMENTS

In many switching applications, a major portion of the

transistor power dissipation occurs during the fall time (tfi).

For this reason considerable effort is usually devoted to

reducing the fall time. The recommended way to accomplish

this is to reverse bias the base−emitter junction during

turn−off. The reverse biased switching characteristics for

inductive loads are discussed in Figure 11 and Table 3 and

resistive loads in Figures 13 and 14. Usually the inductive

load component will be the dominant factor in

SWITCHMODE applications and the inductive switching

data will more closely represent the device performance in

actual application. The inductive switching characteristics

are derived from the same circuit used to specify the reverse

biased SOA curves, (See Table 1) providing correlation

between test procedures and actual use conditions.

In circuits A and D, inductive reactance is clamped by the

diodes shown. In circuits B and C the voltage is clamped by

3. For detailed information on specific switching applications, see

ON Semiconductor Application Notes AN−719, AN−767.

http://onsemi.com

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