2SC1212A 查看數據表（PDF） - Inchange Semiconductor
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2SC1212A Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1212 2SC1212A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SC1212
2SC1212A
IC=10mA ;RBE=∞
V(BR)CBO
Collector-base
breakdown voltage
2SC1212
2SC1212A
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A
VBE
Base-emitter voltage
IC=50mA ; VCE=4V
ICBO
Collector cut-off current
VCB=50V; IE=0
hFE-1
DC current gain
IC=50mA ; VCE=4V
hFE-2
fT
DC current gain
Transition frequency
IC=1A ; VCE=4V
IC=30mA ; VCE=4V
hFE-1 Classifications
B
C
60-120
100-200
MIN TYP. MAX UNIT
50
V
80
50
V
80
4
V
1.5
V
1.0
V
5
μA
60
200
20
160
MHz
2
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