MJE180 查看數據表（PDF） - Inchange Semiconductor

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MJE180

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

DESCRIPTION

·Collector–Emitter Sustaining Voltage—

: VCEO(SUS) = 40 V

·DC Current Gain—

: hFE = 30(Min) @ IC= 0.5 A

= 12(Min) @ IC= 1.5 A

·Complement to Type MJE170

APPLICATIONS

·Low power audio amplifier

·Low current high speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-peak

6

A

IBB

Base Current

Collector Power Dissipation

PC

Ta=25℃

Collector Power Dissipation

TC=25℃

Ti

Junction Temperature

Tstg

Storage Temperature Range

1

A

1.5

W

12.5

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

10 ℃/W

Thermal Resistance,Junction to Ambient 83.4 ℃/W

isc Product Specification

MJE180

isc Website：www.iscsemi.cn

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