MJE180 查看數據表（PDF） - Inchange Semiconductor
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MJE180 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE180
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A ;IB=B 0.15 A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A ;IB= 0.6 A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.15A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.6A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 1V; IC= 0.5A
VCB= 60V; IE= 0
VCB= 60V; IE= 0;TC= 150℃
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.1 A ; VCE= 1V
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 1V
hFE-3
DC Current Gain
IC= 1.5 A ; VCE= 1V
fT
Current-Gain—Bandwidth Product IC= 0.1 A; VCE= 10V;
COB
Collector Capacitance
IE= 0; VCB= 10V; ftest = 0.1MHz
MIN MAX UNIT
40
V
0.3
V
0.9
V
1.7
V
1.5
V
2.0
V
1.2
V
0.1
μA
0.1
mA
0.1
μA
50
250
30
12
50
MHz
40
pF
isc Website：www.iscsemi.cn
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