BUZ76A 查看數據表（PDF） - Infineon Technologies

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BUZ76A

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 76 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 °C

-

Inverse diode direct current,pulsed

ISM

TC = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 6 A

-

Reverse recovery time

trr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

A

-

2.7

-

11

V

1

1.4

ns

300

-

µC

2.5

-

Semiconductor Group

4

07/96

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