BUZ76A 查看數據表（PDF） - Infineon Technologies
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BUZ76A Datasheet PDF : 9 Pages
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BUZ 76 A
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 3 A, VDD = 50 V
RGS = 25 Ω, L = 35 mH
190
mJ
160
EAS
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 6 A
16
V
VGS
12
10
0,2
V
DS
max
0,8
V
DS
max
8
6
4
2
0
0 4 8 12 16 20 24 nC 30
QGate
480
V
460
V
(BR)DSS
450
440
430
420
410
400
390
380
370
360
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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