BC856S 查看數據表（PDF） - KEXIN Industrial

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产品描述 (功能)

生产厂家

BC856S

PNP General Purpose Double Transistor

KEXIN Industrial 

SMD Type

Transistors

PNP General Purpose Double Transistor

KC856S(BC856S)

Features

Two transistors in one package

Reduces number of components and board space

No mutual interference between the transistors.

SOT-363

1.3+0.1

-0.1

0.65

Unit: mm

0.3+0.1

-0.1

2.1+0.1

-0.1

0.1+0.05

-0.02

1 E1

2 B1

3 C2

4 E2

5 B2

6 C1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Junction Temperature Range

Symbol

VCBO

VCEO

VEBO

IC

PD

R JA

TJ, Tstg

Rating

-80

-65

-5

-100

200

416

-65 to +150

Unit

V

V

V

mA

mW

/W

Electrical Characteristics Ta = 25

Parameter

Collector-Cutoff Current

Emitter- cutoff current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Transistion frequency

Symbol

Testconditons

ICBO

VCB =- 30 V, IE = 0

VCB =- 30 V, IE = 0, TA = 150

IEBO IC=0,VEB=-5V

hFE IC = -2.0 mA, VCE = -5.0 V

IC = -10 mA, IB =- 0.5 mA

VCE(sat)

IC = -100 mA, IB =- 5.0 mA

VBE(sat) IC = -10 mA, IB=-0.5mA

Cob VCB = -10 V, f = 1.0 MHz

fT IC = -10 mA, VCE = -5.0V,f = 100 mHz

Min Typ Max Unit

-15 nA

-5.0 A

-100 nA

110

-100 mV

-300 mV

700

mV

2.5 pF

100

MHz

Marking

Marking

5F

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