PHPT610030PK 查看數據表（PDF） - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
PHPT610030PK Datasheet PDF : 15 Pages
| |||
NXP Semiconductors
PHPT610030PK
PNP/PNP high power double bipolar transistor
-1.6
VBE
(V)
-1.2
-0.8
-0.4
aaa-010860
(1)
(2)
(3)
-1.2
VBEsat
(V)
-1.0
-0.8
-0.6
-0.4
aaa-010861
(1)
(2)
(3)
0
-10-1
-1
-10
-102
-103
-104
IC (mA)
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
-10
VCEsat
(V)
aaa-010862
-1
(1)
-10-1
(2)
(3)
-10-2
-0.2
-10-1
-1
-10
-102
-103
-104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
-10
VCEsat
(V)
aaa-010863
-1
-10-1
(1)
(2)
-10-2
(3)
-10-3
-10-1
-1
-10
-102
-103
-104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
-10-3
-10-1
-1
-10
-102
-103
-104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
PHPT610030PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 15
Share Link: 