BU508AF 查看數據表（PDF） - SavantIC Semiconductor

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BU508AF

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU508AF

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.6A

VBEsat

Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=4.5A ;IB=2A

VCE=RatedVCE; VBE=0

TC=125

VEB=6V; IC=0

hFE

DC current gain

IC=0.1A ; VCE=5V

fT

Transition frequency

IC=0.1A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

MIN TYP. MAX UNIT

700

V

7.5

13.5

V

1.0

V

1.1

V

1.0

2.0

mA

10

mA

6

30

7

MHz

125

pF

2

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