ACE4953BFM-H 查看數據表（PDF） - ACE Technology Co., LTD.

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ACE4953BFM-H

Dual P-Channel Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

ACE4953B

Dual P-Channel Enhancement Mode Field Effect Transistor

Ordering information

ACE4953B XX + H

Halogen - free

Pb - free

FM : SOP-8

Electrical Characteristics

TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

Gate Leakage Current

IGSS

VGS=±12V, VDS=0V

VGS=-10V, ID=-6A

45

Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4.7A

51

VGS=-2.5V, ID=-1A

65

Gate Threshold Voltage

VGS(th) VDS=VGS, IDS=-250uA -0.6 -0.8

V

-1 uA

100 nA

55

58 mΩ

80

-1.4 V

Forward Transconductance

gFS

Diode Forward Voltage

VSD

Maximum Body-Diode Continuous

Current

IS

VDS=-5V, ID=-5.5A

VGS=0V, ISD=-1.7A

13

S

-0.8 -1.1 V

1.7 A

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn- Off Rise Time

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VDS=-10V, VGS=-4.5V,

ID=-4.5A

VGS=-4.5V, VDS=-10V,

RL=10Ω, RGEN=6Ω,

ID=-1A

Dynamic

8.92 11.6

1.8 2.34 nC

2.04 2.65

16.08 32.16

5.28 10.56

ns

37.6 75.2

7.28 14.5

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

Coss

VDS=-10V, VGS=0V

f=1MHz

Crss

800 960

131

pF

103

Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

VER 1.2 2

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