MMBR911 查看數據表（PDF） - Motorola => Freescale

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MMBR911

NPN Silicon High-Frequency Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mA, IB = 0)

V(BR)CEO

12

—

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

V(BR)CBO

20

—

Emitter–Base Breakdown Voltage

(IE = 0.1 mA, IC = 0)

V(BR)EBO

2.0

—

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

ICBO

—

—

ON CHARACTERISTICS

DC Current Gain

(IC = 30 mAdc, VCE = 10 Vdc)

hFE

30

—

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

—

Current Gain–Bandwidth Product

(VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz)

fT

—

6.0

FUNCTIONAL TESTS

Gain @ Noise Figure

(IC = 10 mAdc, VCE = 10 Vdc)

GNF

f = 0.5 GHz

—

17

f = 1.0 GHz

—

11

Noise Figure

(IC = 10 mAdc, VCE = 10 Vdc)

NF

f = 0.5 GHz

f = 1.0 GHz

—

2.0

—

2.9

10

8

6

4

2

VCE = 10 V

f = 1 GHz

0

0

10

20

30

40

50

IC, COLLECTOR CURRENT (mA)

Figure 1. Current Gain–Bandwidth versus

Collector Current @ 1.0 GHz

Max

Unit

—

Vdc

—

Vdc

—

Vdc

50

nAdc

200

—

1.0

pF

—

GHz

dB

—

—

dB

—

—

MMBR911LT1

2

MOTOROLA RF DEVICE DATA

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