BS108 查看數據表（PDF） - General Semiconductor

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BS108

DMOS Transistors (N-Channel)

General Semiconductor 

BS108

DMOS Transistors (N-Channel)

TO-92

.181 (4.6)

.142 (3.6)

max.∅ .022 (0.55)

FEATURES

♦ High breakdown voltage

♦ High input impedance

♦ Low gate threshold voltage

♦ Low drain-source ON resistance

♦ High-speed switching

♦ No minority carrier storage time

♦ CMOS logic compatible input

♦ No thermal runaway

♦ No secondary breakdown

♦ Specially suited for telephone subsets

.098 (2.5)

D

S

G

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

On special request, this transistor is also manu-

factured in the pin configuration TO-18.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Value

Unit

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage (pulsed)

Drain Current (continuous)

Power Dissipation at Tamb = 25 °C

Junction Temperature

VDSS

240

V

VDGS

240

V

VGS

±20

V

ID

230

mA

Ptot

0.831)

W

Tj

150

°C

Storage Temperature Range

TS

–65 to +150

°C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

Inverse Diode

Max. Forward Current (continuous)

at Tamb = 25 °C

Forward Voltage Drop (typ.)

at VGS = 0, IF = 0.75 A, Tj = 25 °C

Symbol

Value

Unit

IF

0.75

A

VF

0.85

V

4/98

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