BS108 查看數據表（PDF） - General Semiconductor

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BS108

DMOS Transistors (N-Channel)

General Semiconductor 

BS108

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

at ID = 100 µA, VGS = 0

Gate-Body Leakage Current

at VGS = 15 V, VDS = 0

V(BR)DSS

240

250

–

V

IGSS

–

–

10

nA

Drain Cutoff Current

at VDS = 130 V, VGS = 0

at VDS = 70 V, VGS = 0.2 V

IDSS

–

–

1

µA

IDSX

–

–

25

µA

Gate-Source Threshold Voltage

at VGS = VDS, ID = 1 mA

VGS(th)

0.8

1.5

2.5

V

Drain-Source ON Resistance

at VGS = 2.8 V, ID = 100 mA

RDS(ON)

–

5.5

8

Ω

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1501)

K/W

Capacitance

at VDS = 20 V, VGS = 0, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

CiSS

–

80

–

pF

COSS

–

20

–

pF

CrSS

–

5

–

pF

Switching Times

at VGS = 10 V, VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

ton

–

5

–

ns

toff

–

50

–

ns

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

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