BTS933 查看數據表（PDF） - Infineon Technologies

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BTS933

Smart Lowside Power Switch

Infineon Technologies 

HITFET®BTS 933

Smart Lowside Power Switch

Features

• Logic Level Input

Product Summary

Drain source voltage

• Input Protection (ESD)

On-state resistance

• Thermal Shutdown

Current limit

• Overload protection

Nominal load current

• Short circuit protection

Clamping energy

• Overvoltage protection

• Current limitation

• Maximum current adjustable with external resistor

• Current sense

• Status feedback with external input resistor

• Analog driving possible

VDS

RDS(on)

I D(lim)

I D(ISO)

EAS

60 V

50 mΩ

3A

7A

2000 mJ

Application

• All kinds of resistive, inductive and capacitive loads in switching or

linear applications

• µC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS® chip on chip tech-

nology. Fully protected by embedded protected functions.

Vbb

+

2

LOAD

M

NC

1

IN

dv/dt

lim ita tio n

Current

lim ita tio n

Overvoltage

protection

Drain

3

4 CC

RCC

ESD

Overload

protection

Over-

te m pe r a tu r e

protection

SShhoorrtt cciirrccuuiitt

pprrootteeccttiioonn

Source

5

HITFET®

Semiconductor Group

Page 1

02.12.1998

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