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2N6173 查看數據表(PDF) - Digitron Semiconductors

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2N6173 Datasheet PDF : 5 Pages
1 2 3 4 5
DIGITRON
2N3870-2N3873
2N3896-2N3899
2N6171-2N6174
SEMICONDUCTORS
SILICON CONTROLLED RECTIFIERS
REVERSE BLOCKING TRIODE THYRISTOR
35 AMPS RMS, 100-800 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TC = 100°C unless otherwise noted)
Rating
Symbol
Peak repetitive forward or reverse blocking voltage (1)
(TJ = -40 to 100°C, ½ sine wave, 50-400 Hz, gate open)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
VRRM or VDRM
Value
100
200
400
600
Unit
Volts
Peak non-repetitive forward or reverse blocking voltage
(t 5ms)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
VRSM or VDSM
150
330
2N3872, 2N3898, 2N6173
660
2N3873, 2N3899, 2N6174
700
Volts
Average on-state current (2)
(TC = -40 to 65°C)
(TC = 85°C)
Peak non-repetitive surge current
(one cycle, 60Hz) (TC = 65°C)
Circuit fusing
(TC = -40 to 100°C)
(t = 1 to 8.3 ms)
IT(AV)
ITSM
I2t
22
Amps
11
Amps
350
510
A2s
Peak gate power
Average gate power
Peak forward gate current
Peak gate voltage
Operating junction temperature range
Storage temperature range
Stud torque
PGM
PG(AV)
IGM
VGM
TJ
Tstg
-
20
0.5
2
10
-40 to 100
-40 to 150
30
Watts
Watt
Amps
Volts
°C
°C
In. lb.
Thermal resistance, junction to case
2N3870 – 2N3873, 2N3896-2N3899
2N6171-2N6174
RӨJC
0.9
°C/W
1
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices
should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2: Isolated stud devices must be derated an additional 10 percent.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open, TJ = 100°C)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
Rated VDRM or VRRM, gate open, TJ = 25°C)
All devices
-
-
IDRM, IRRM
-
-
-
Typ.
1
1
1
1
-
Max.
2.0
2.5
3.0
4.0
10
Unit
mA
µA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116

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