BUP314D 查看數據表（PDF） - Siemens AG

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BUP314D

IGBT With Antiparallel Diode

Siemens AG 

BUP 314D

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 25 A

20

V

VGE 16

14

600 V

800 V

12

10

8

6

4

2

0

0 20 40 60 80 100 120 140 nC 170

QGate

Typ. capacitances

C = f (VCE)

parameter: VGE = 0 V, f = 1 MHz

10 1

nF

C

10 0

Ciss

10 -1

Coss

Crss

10 -2

0

5 10 15 20 25 30 V 40

VCE

Short circuit safe operating area

ICsc = f (VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH

Reverse biased safe operating area

ICpuls = f (VCE) , Tj = 150°C

parameter: VGE = 15 V

10

2.5

ICsc/IC(90°C)

6

ICpuls/IC

1.5

4

1.0

2

0

0 200 400 600 800 1000 1200 V 1600

VCE

Semiconductor Group

7

0.5

0.0

0

200 400 600 800 1000 1200 V 1600

VCE

Jul-30-1996

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