BC368 查看數據表（PDF） - Philips Electronics
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BC368 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
BC368
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBE
fT
hh----FF---EE---12-
collector cut-off current
IE = 0; VCB = 25 V
−
IE = 0; VCB = 25 V; Tj = 150 °C
−
emitter cut-off current
IC = 0; VEB = 5 V
−
DC current gain
IC = 5 mA; VCE = 10 V
50
IC = 500 mA; VCE = 1 V; see Fig.2 85
IC = 1 A; VCE = 1 V; see Fig.2
60
collector-emitter saturation voltage IC = 1 A; IB = 100 mA
−
base-emitter voltage
IC = 5 mA; VCE = 10 V
−
IC = 1 A; VCE = 1 V
−
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 40
DC current gain ratio of the
IC = 500 mA; VCE = 1 V
−
complementary pairs
MAX.
100
10
100
−
375
−
500
700
1
−
1.6
UNIT
nA
µA
nA
mV
mV
V
MHz
1999 Apr 26
3
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