BC846 查看數據表（PDF） - Philips Electronics
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BC846 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BC846; BC847; BC848
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
emitter-base cut-off current
DC current gain
BC846A; BC847A
BC846B; BC847B; BC848B
BC847C
DC current gain
BC846
BC847
BC846A; BC847A
BC846B; BC847B; BC848B
BC847C
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
VCB = 30 V; IE = 0
VCB = 30 V; IE = 0;
Tj = 150 °C
VEB = 5 V; IC = 0
IC = 10 µA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA;
note 1
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA;
note 1
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
VCB = 10 V; IE = Ie = 0;
f = 1 MHz
VCE = 5 V; IC = 10 mA;
f = 100 MHz
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
MIN.
−
−
TYP.
−
−
MAX. UNIT
15
nA
5
µA
−
−
100 nA
−
90
−
−
150 −
−
270 −
110 −
450
110 −
800
110 180 220
200 290 450
420 520 800
−
90
250 mV
−
200 600 mV
−
700 −
mV
−
900 −
mV
580 660 700 mV
−
−
770 mV
−
2.5 −
pF
100 −
−
MHz
−
2
10
dB
2004 Feb 06
4
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