BC846 查看數據表（PDF） - Shenzhen Ping Sheng Electronics Co., Ltd.
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BC846 Datasheet PDF : 4 Pages
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NPN general purpose Transistor
BC846/847/848
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage BC846
BC847
BC848
Collector-emitter breakdown voltage BC846
BC847
BC848
Emitter-base breakdown voltage BC846
BC847
BC848
Collector cut-off current
BC846
BC847
BC848
Emitter cut-off current
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,848C
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=10μA,IC=0
VCB=70V,IE=0
ICBO
VCB=50V,IE=0
VCB=30V,IE=0
IEBO
VEB=5V,IC=0
hFE
VCE=5V,IC=2mA
80
50
30
65
45
30
6
6
5
110
200
420
V
V
V
0.1 μA
0.1 μA
220
450
800
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=5mA
0.5 V
Base-emitter saturation voltage
VBE(sat) IC=100mA, IB=5mA
1.1 V
Transition frequency
fT
VCE=5V, IC= 10mA 100
f=100MHz
MHz
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