BC846 查看數據表（PDF） - Continental Device India Limited
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BC846 Datasheet PDF : 5 Pages
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
P IN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
BC846, BC847, BC848
SOT-23
Formed SMD Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Tj=150 ºC
Base Emitter on Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
VBE(on) *
VCE(Sat)
VBE(Sat)***
hFE
IC=2mA, VCE=5V
IC=10mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10µA, VCE=5V
BC846A/BC847A/BC848A
BC846B/BC847B/BC848B
BC847C/BC848C
MIN TYP MAX UNITS
15
nA
5
µA
0.58
0.70 V
0.77
0.25 V
0.60
0.7
V
0.9
90
150
270
Collector Capacitance
Transition Frequency
Noise Figure
IC=2mA, VCE=5V
BC846
110
450
BC847/BC848
110
800
BC846A/BC847A/BC848A 110
220
BC846B/BC847B/BC848B 200
450
BC847C/BC848C
420
800
Cc
IE=ie=0, VCB=10V, f=1MHz
2.5
pF
fT
IC=10mA, VCE=5V,f=100MHz 100
NF
IC=0.2mA, VCE=5V
Rs=2kΩ, f=1KHz, B=200Hz
MHz
10
dB
*VBE (on) decreases by about 2mV/K with increasing temperature.
***VBE(sat) decreases by about 1.7mV/K with increasing temperature.
BC846_848Rev_2 170407E
Continental Device India Limited
Data Sheet
Page 2 of 5
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