SFP9530 查看數據表（PDF） - Fairchild Semiconductor

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SFP9530

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

SFP9530

FEATURES

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n 175oC Opereting Temperature

n Extended Safe Operating Area

n Lower Leakage Current : -10 µA (Max.) @ VDS = -100V

n Low RDS(ON) : 0.225 Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25oC)

Continuous Drain Current (TC=100oC)

Drain Current-Pulsed

O1

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

O2

Avalanche Current

O1

Repetitive Avalanche Energy

O1

Peak Diode Recovery dv/dt

O3

Total Power Dissipation (TC=25oC)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

BVDSS = -100 V

RDS(on) = 0.3 Ω

ID = -10.5 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

Value

-100

-10.5

-7.5

-42

±30

368

-10.5

6.6

-6.5

66

0.44

- 55 to +175

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/oC

oC

Thermal Resistance

Symbol

RθJC

RθCS

RθJA

Characteristic

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

Typ.

--

0.5

--

Max.

2.27

--

62.5

Units

oC/W

Rev. C

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