SFP9530 查看數據表（PDF） - Fairchild Semiconductor
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SFP9530 Datasheet PDF : 7 Pages
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SFP9530
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-100 -- -- V
-- -0.1 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.3 Ω
-- 5.5 -- S
-- 800 1035
-- 160 240 pF
-- 60 90
-- 13 35
-- 22 55
ns
-- 45 100
-- 25 60
-- 30 38
-- 5.4 -- nC
-- 12.2 --
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-20V
VGS=20V
VDS=-100V
VDS=-80V,TC=150oC
VGS=-10V,ID=-5.3A O4
VDS=-40V,ID=-5.3A O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
VDD=-50V,ID=-10.5A,
RG=12 Ω
See Fig 13 O4 O5
VDS=-80V,VGS=-10V,
ID=-10.5A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -10.5
Integral reverse pn-diode
A
-- -42
in the MOSFET
O4 -- -- -4.0 V TJ=25oC,IS=-10.5A,VGS=0V
-- 120 -- ns TJ=25oC,IF=-10.5A
-- 0.53 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=5.0mH, IAS=-10.5A, VDD=-25V, RG=27Ω*, Starting TJ =25oC
O3 ISD <_ -10.5A, di/dt <_ 400A/µs, VDD <_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250µs, Duty Cycle<_ 2%
O5 Essentially Independent of Operating Temperature
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