D92M-03 查看數據表（PDF） - Thinki Semiconductor Co., Ltd.

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D92M-03

20 Ampere, 400 Volt Common Cathode Insulated Fast Recovery Diodes

Thinki Semiconductor Co., Ltd. 

D92M-03

®

D92M-03

Pb

Pb Free Plating Product

20 Ampere,400 Volt Common Cathode Insulated Fast Recovery Diodes

APPLICATION

· Freewheeling, Snubber, Clamp

· Inversion Welder

· PFC

· Plating Power Supply

· Ultrasonic Cleaner and Welder

· Converter & Chopper

· UPS

TO-3PF/TO-3PML

Anode

PRODUCT FEATURE

· Ultrafast Recovery Time

· Soft Recovery Characteristics

· Low Recovery Loss

· Low Forward Voltage

· High Surge Current Capability

· Low Leakage Current

Internal Configuration

Base Backside

—

Cathode

Anode

GENERAL DESCRIPTION

L4204S using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine.

ABSOLUTE MAXIMUM RATINGS

TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

Unit

VR

Maximum D.C. Reverse Voltage

400

V

V RRM

Maximum Repetitive Reverse Voltage

400

V

I F(AV)

Average Forward Current

TC=110°C, Per Diode

TC=110°C, Per Package

10

A

20

A

IF(RMS) RMS Forward Current

TC=110°C, Per Diode

14

A

I FSM

Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine

100

A

PD

Power Dissipation

83

W

TJ

Junction Temperature

-40 to +150

°C

T STG

Storage Temperature Range

-40 to +150

°C

Torque Module-to-Sink

Recommended（M3）

1.1

N·m

R θJC

Thermal Resistance

Junction-to-Case

1.5

°C /W

Weight

6

g

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

I RM

Reverse Leakage Current

VR=400V

VR=400V, TJ=125°C

--

--

15

µA

--

-- 250 µA

VF

Forward Voltage

I F =10A

IF=10A, TJ=125°C

-- 1.00 --

V

-- 0.87 --

V

t rr

Reverse Recovery Time

IF=1A, VR=30V, diF/dt=-200A/μs --

20

--

ns

t rr

Reverse Recovery Time

VR=200V, IF=10A

--

25

--

ns

I RRM

Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C

-- 2.2 --

A

t rr

Reverse Recovery Time

VR=200V, IF=10A

--

46

--

ns

I RRM

Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C

-- 5.5 --

A

Rev.05

© 2006 Thinki Semiconductor Co., Ltd.

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