MJ10047 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
生产厂家
MJ10047
New Jersey Semiconductor
MJ10047 Datasheet PDF : 3 Pages
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MJ1Q04t; MJ10044, MJ10047
MAXIMUM RATINGS (Continued) ITC - 26'C unless otherwise noted.)
Rating
Symbol
Collector-Emitter Voltage (IB - 0)
Collector-Emitter Voltage (RBE • 1* Ohms)
Collector-Base Voltage
Emitter-Bale Voltage
VCEO
VCEH
VCB
VEB
Collector Current — Operating
fTc - 115°C)
(Tc = 85'C)
(Tc = 8S'C)
'c(op)
Collector Current — Continuous
fe
— Peak Repetitive
— Peak Nonrepetitlve
Base Current — Continuous
IB
— Peak Nonrepetitive
Total Device Dissipation
PD
Derate above TC = 26'C
For 1-mlnute overload
Operating Junction and Storage Temperature Range
For 1-mlnute overload
Tj, Tstg
MJ10041
850
900
900
25
37.6
76
126
MJ10044
460
600
600
8.0
60
75
ISO
250
26
SO
250
2.0
333
-55 to +150
-65 to 200
MJ10047
250
300
300
100"
100
300
600
Unit
Vdc
Vdo
Vdc
Vdc
A
A
A
Watts
vwc
Watts
•c
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Mln
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
«C = 126 mAdc)
MJ 10041
MJ 10044
MJ 10047
VCEO(sua)
850
450
250
Vdc
-
Collector Cutoff Current
(VCE - mud VCB. VBE(off) - 1.5 Vdc)
(VcE - Rated VCB. VflEloffl = t-B Vdc, TC - 160'C|
ICEV
-
2.0
mA
10
Collector Cutoff Current
{VCE - Rated VCER, RBE= 10 n. TC = loo-C)
ICER
—
10
mA
Emitter Cutoff Current
(VEB - 4.0 Vdc. IC - 0)
MJ10041
MJ10D44
MJ10047
IEBO
mA
500
-
2.6
SAFE OPERATING AREA
Second Breekdown Collector Current with Base Forward-Biased
Clamped Inductive SOA with Base Reverse-Biased
Overload Safe Operating Area
FBSOA
RBSOA
OLSOA
See Figures 32, 34 & 36
See Figures 33, 35 & 37
See Figures 38, 39, 40, 41, 42 Si 43
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = o, f|est - 1.0 kHz)
C0b
—
2000
PF
(1) Pulse Tetl, Pulie width of 300 ^, duty cycle < 2.0%,
•This rating is wtlh a 60% duty cycle, and Is limited by power dissipation. Higher operating currents am «IFowibl« it lowtr duty cyclai.
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