BS170 查看數據表（PDF） - Infineon Technologies

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BS170

SIPMOS® Small-Signal Transistor

Infineon Technologies 

BS170

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

at ID = 100 µA, VGS = 0

V(BR) DSS

60

80

–

V

Gate Threshold Voltage at VGS = VDS,

ID = 1 mA

VGS(th)

1.0

2

3.0

V

Gate-Body Leakage Current

at VGS = 15 V, VDS = 0

IGSS

–

–

10

nA

Drain Cutoff Current at VDS = 25 V, VGS = 0

IDSS

–

–

0.5

µA

Drain-Source ON Resistance

at VGS = 10 V, ID = 0.2 A

Thermal Resistance Junction to Ambient Air

RDS(ON)

–

RthJA

–

3.5

5.0

Ω

–

1501)

K/W

Forward Transconductance

at VDS = 10 V, ID = 0.2 A, f = 1 MHz

Input Capacitance

at VDS = 10 V, VGS = 0, f = 1 MHz

gm

–

200

–

mS

Ciss

–

30

–

pF

Switching Times

at VGS = 10 V, VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

ton

–

5

–

ns

toff

–

15

–

ns

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

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