BC846AW(2007) 查看數據表（PDF） - Infineon Technologies

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BC846AW
(Rev.:2007)

NPN Silicon AF Transistors

Infineon Technologies 

BC846...-BC850...

DC current gain hFE = ƒ(IC)

VCE = 5 V

10 3

h FE 5 100 C

25 C

102 -50 C

5

EHP00365

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 20

10 2

mA

ΙC

10 1

5

100 C

25 C

-50 C

EHP00367

10 1

10 0

5

5

10 0

10 -2

5 10 -1 5 10 0

5 101 mA 10 2

ΙC

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 20

10 -1

0

0.1 0.2 0.3 0.4 V 0.5

VCEsat

Collector cutoff current ICBO = ƒ(TA)

VCB = 30 V

10 2

Ι C mA

10 1

5

10 0

5

100 C

25 C

-50 C

EHP00364

10 4

nA

Ι CB0

10 3

5

10 2

5

10 1

5

EHP00415

max

typ

10 -1

0

0.2 0.4 0.6 0.8

V 1.2

V BEsat

10 0

0

50

100 ˚C 150

TA

7

2007-04-20

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