BC846AW 查看數據表（PDF） - Secos Corporation.
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BC846AW Datasheet PDF : 4 Pages
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Elektronische Bauelemente
BC846AW,BW
BC847AW, BW, CW
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
ELECTRICAL CHARACTERISTICS ( Tamb = 25°C unless otherwise specified )
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cutoff Current
Collector to Emitter Saturation Voltage
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
SYMBOL
VCBO
VCEO
VEBO
ICBO
VCE(sat)
Base to Emitter Saturation Voltage
VBE(sat)
Base to Emitter Voltage
DC Current Gain
BC846AW,BC847AW,BC848AW
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
BC846AW,BC847AW,BC848AW
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
Transition Frequency
Collector Output Capacitance
BC846AW,BC847AW,BC848AW
Noise Figure
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
VBE(on)
hFE(1)
hFE(2)
fT
COb
NF
MIN.
80
50
30
65
45
30
6
6
5
-
-
-
-
-
580
-
-
110
200
420
100
-
-
TYP. MAX. UNIT TEST CONDITIONS
-
-
V
IC = 10 uA, IE = 0
-
-
V
IC = 10 mA, IB = 0
-
-
V
IE = 1 μA, IC = 0
-
15
nA
-
0.25
V
-
0.6
0.7
-
V
0.9
-
660 700
mV
-
770
90
150
-
270
220
-
450
800
VCB = 30 V
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 μA
VCE = 5 V, IC = 2 mA
-
-
MHz VCE = 5 V, IC = 10 mA, f = 100MHz
-
4.5
pF
VCB = 10 V, f=1MHz
-
VCE= 5 V, IC= 0.2 mA,
-
10
dB
f= 1KHz, RS= 2 KΩ,
4
BW= 200Hz
24-Mar-2010 Rev. A
Page 2 of 4
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