SF55 查看數據表（PDF） - Diode Semiconductor Korea
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SF55 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
SF51 --- SF58
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
t rr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10 ns/cm
FIG.2 -- TYPICAL FORW ARD CHARACTERISTIC
6.0
SF51---SF54
5.0
SF55---SF56
4.0
TJ=25
Pulse Width=300µs
3.0
0.3
0.5 0.7
0.9 1.1
1.3 1.5
INSTANTANEOUS FORW ARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
200
100
60
40
SF51 - SF54
20
10
SF55 - SF56
6
4
TJ=25
2
1 0.1 0.2 0.4 1 2
4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.3 -- FORW ARD DERATING CURVE z
6.0
5.0
4.0
3.0
Single Phase
Half Wave 60HZ
2.0 Resistive or
Inductive Load
1.0
0.375"(9.5mm)Lead Length
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORW ARD SURGE CURRENT
175
150
125
8.3ms Single Half
Sine-Wave
100
75
50
25
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
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