MCR100-8 查看數據表（PDF） - New Jersey Semiconductor
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MCR100-8 Datasheet PDF : 2 Pages
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MCR100 Series
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Notes 1 and 2)
VDRM,
V
(Tj = -40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)
VRRM
MCR100-3
100
MCR100-4
200
MCR100-6
400
MCR100-8
600
On-State RMS Current, (Tc = 80°C) 180° Conduction Angles
Ij(RMS)
0.8
A
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, Tj = 25°C)
!TSM
10
A
Circuit Fusing Consideration, (t = 8.3 ms)
I2t
0.415
A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width < 1 .0 (is)
PGM
0.1
W
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms)
PG(AV)
0.10
W
Forward Peak Gate Current, (TA = 25°C, Pulse Width < 1.0 us)
'GM
1.0
A
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width <, 1 .0 us)
VGRM
5.0
V
Operating Junction Temperature Range @ Rate VRRM and VDRM
Tj
-40 to 110
°C
Storage Temperature Range
Tstg
-40 to 1 50
°c
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,Junction-to-Case
Junction-to- Ambient
Lead Solder Temperature
( < 1/16" from case, 10 sees max)
ROJC
75
°C/W
RHJA
200
TL
260
°c
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Min | Typ | Max | Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
Tc = 25°C
(VD = Rated VDRM and VRRM; RGK = 1 kO)
Tc = 110°C
ON CHARACTERISTICS
Peak Forward On-State Voltage*
(lTM = 1.0APeak@TA = 25°C)
IDRM. IRRM
VTM
MA
-
10
_
100
-
-
1.7
V
Gate Trigger Current (Continuous dc) (Note 3)
Tc = 25°C
IGT
(VAK = 7.0 Vdc, R L = 1000)
-
40
200
HA
Holding Current<2>
(VAK = 7.0 Vdc, Initiating Current = 20 mA)
Tc = 25°C
IH
Tc = -40°C
—
0.5
5.0
mA
10
Latch Current
(VAK = 7.0 V, Ig = 200 (iA)
Tc = 25°C
IL
Tc = -40°C
0.6
10
mA
-
15
Gate Trigger Voltage (Continuous dc) (Note 3)
TC = 25°C
VGT
(VAK = 7.0 Vdc, RL = 1 00 £3) Tc = -40°C
DYNAMIC CHARACTERISTICS
0.62
0.8
V
-
1.2
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1000 £3,Tj = 110°C)
dV/dt
20
35
-
V/|is
Critical Rate of Rise of On-State Current
(IPK = 20 A; Pw = 10 |isec; diG/dt = 1 A/|isec, Igt = 20 mA)
di/dt
—
—
50
A/us
•Indicates Pulse Test: Pulse Width < 1.0 ms, Duty Cycle < 1%.
3. RGK = 1000 Q included in measurement.
4. Does not include RGK in measurement.
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