2SK1745 查看數據表（PDF） - Inchange Semiconductor
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2SK1745 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
2SK1745
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
VDS= VGS; ID=1mA
IS=18A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 9A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=10V;
VGS=0V;
fT=1MHz
tr
Rise Time
ton
Turn-on Time
tf
Fall Time
toff
Turn-off Time
VGS=10V;
ID=9A;
VDD=200V;
RL=22Ω
MIN TYPE MAX UNIT
500
V
2.0
4.0
V
1.7
V
0.36
Ω
±100 nA
300
µA
2100
210
pF
530
80
120
ns
70
210
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