SEMICONDUCTOR
DATA SHEET
MBR1020FCT~MBR10200FCT
10A SCHOTTKY BARRIER RECTIFIER
ITO-220AB
FEATURES
• Schottky Barrier Chip
•Guard Ring for Transient Protection
•High Current Capability, Low Forward
•Low Reverse Leakage Current
•High Surge Current Capability
•Plastic Material has UL Flammability
Classification 94V-O
• High temperature soldering : 260OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.406(10.3)
MAX.
.137(3.5)
.118(3.0)
.071(1.80)
MAX.
.055(1.4)
.039(1.0)
MECHANICAL DATA
•Case: ITO-220AB Molded Plastic
•Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
•Polarity: As Marked on Body
• Mounting Position: Any
•Marking: Type Number
.035(0.9)
.011(0.3)
.1(2.55)
.1(2.55)
Unit:inch(mm)
.189(4.8)
.165(4.2)
.130(3.3)
MAX.
.032(0.8)
MAX.
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol MBR MBR
MBR MBR MBR
MBR MBR MBR MBR MBR MBR Units
1020FCT 1030FCT 1040FCT 1045FCT 1050FCT 1060FCT 1065FCT 1080FCT 10100FCT 10150FCT 10200FCT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
VRRM
VRWM
20
30
40
45
50
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS) 14
21
28 31.5 35
Average Rectified Output Current @TC =
IF
95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave
superimposed on rated load (JEDEC
Method)
IFSM
60
65
80
100
150
200 Volts
42
45.5 56
70
10
105
140 Volts
Amps
150
Amps
Forward Voltage @IF = 5.0A
VF
Peak Reverse Current @TA = 25°C
IRM
At Rated DC Blocking Voltage @TA = 100°C
Typical Junction Capacitance (Note 1)
Cj
0.55
0.7
0.1
15
350
0.75
0.80
0.90
Volts
0.1
0.025
mA
6.0
10
280
200
pF
Typical Thermal Resistance
Operating and Storage Temperature Range
RθJC
Tj, TSTG
4.5
-55 to +150
℃/W
℃
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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1
REV.03 20141209