BS223 查看數據表（PDF） - General Semiconductor

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BS223

DMOS Transistors (P-Channel)

General Semiconductor 

BS223

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

at –ID = 100 µA, VGS = 0 V

–V(BR)DSS

60

70

–

V

Gate-Body Leakage Current, Forward

at –VGSF = 20 V, VDS = 0 V

Gate-Body Leakage Current, Reverse

at –VGSR = 20 V, VDS = 0 V

Drain Cutoff Current

at –VDS = 60 V, VGS = 0 V

Gate-Source Threshold Voltage

at VGS = VDS, –ID = 250 µA

Drain-Source ON Resistance

at –VGS = 10 V, –ID = 600 mA

–IGSSF

–

–IGSSR

–

–IDSS

–

–VGS(th)

1

RDS(on)

–

–

500

nA

–

500

nA

–

250

µA

1.5

3

V

0.7

0.8

Ω

Capacitance

at –VDS = 25 V, VGS = 0 V, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

CiSS

–

350

–

pF

COSS

–

150

–

pF

CrSS

–

35

–

pF

Switching Times

at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω

Turn-On Time

ton

Turn-Off Time

toff

–

40

–

ns

–

100

–

ns

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1501)

K/W

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

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