12N60A4D 查看數據表（PDF） - Intersil
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12N60A4D Datasheet PDF : 8 Pages
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
VEC
trr
RθJC
IEC = 12A
IEC = 12A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
-
2.2
-
V
-
30
-
ns
-
18
-
ns
-
-
0.75
oC/W
-
-
2.0
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V,
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
70 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 200µH
60
50
40
30
20
10
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
300
TC VGE
75oC 15V
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75oC/W, SEE NOTES
TJ = 125oC, RG = 10Ω, L = 500µH, VCE = 390V
10
1
3
10
20 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20
18
VCE = 390V, RG = 10Ω, TJ = 125oC
16
14
ISC
12
10
8
6
tSC
4
2
0
9
10
11
12
13
14
VGE, GATE TO EMITTER VOLTAGE (V)
300
275
250
225
200
175
150
125
100
75
50
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
2-3
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