BC857ATT1 查看數據表（PDF） - Willas Electronic Corp.

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BC857ATT1

PNP Silicon General Purpose Transistors

Willas Electronic Corp. 

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PRIMARY CHARACTERISTICS

PD

200mW

VCEO

-45V

IC

-100mAdc

hFE

125~800

TJ,Max

150℃

FEATURES

 These transistors are designed for

general purpose amplifier

applications. They are housed in the

SC−89 package which is designed for

low power surface mount

applications.

 Pb−Free Packages are Available

 Moisture Sensitivity Level 1

ϴϱϳdžddϭ

SC-89

Marking Code :

Ex : BC857BTT1

PACKAGE

3F

3F = Device Code

ORDERING INFORMATION

Device

BC857ATT1

BC857BTT1

BC857CTT1

Marking

3E

3F

3G

1

B ASE

3

COLLECT OR

2

EMIT T ER

MECHANICAL DATA

 Case：Molded plastic,SC-89

 Polarity：As Above Marked

 Terminals :Plated terminals,

solderable per MIL-STD-750,Method

2026

 Epoxy : UL94-V0 rated flame

retardant

MAXIMUM RATINGS (TA = 25°C)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation,

FR−4 Board (Note 1)

TA = 25°C

Derated above 25°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

Total Device Dissipation,

FR−4 Board (Note 2)

TA = 25°C

Derated above 25°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

1. FR−4 @ min pad.

2. FR−4 @ 1.0 × 1.0 in pad.

2015.02

Symbol

VCEO

VCBO

VEBO

IC

Max

−45

−50

−5.0

−100

Unit

V

V

V

mAdc

Symbol

PD

RqJA

Max Unit

200

mW

1.6 mW/°C

600 °C/W

PD

RqJA

300

mW

2.4 mW/°C

400 °C/W

TJ, Tstg −55 to

°C

+150

www.willas.com.tw

Rev.L0ϭ

P1

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