2N6282 查看數據表（PDF） - Comset Semiconductors
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2N6282 Datasheet PDF : 3 Pages
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2N6282 – 2N6283 – 2N6284
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance Junction-Case
Value
1.09
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(SUS)
Collector-Emitter
Breakdown Voltage
(*)
IC= 200 m A
IB= 0
2N6282 60 -
2N6283 80 -
2N6284 100 -
VCE= 30 V, IB= 0
ICEO
Collector Cutoff
Current
VCE= 40 V, IB= 0
VCE= 50 V, IB= 0
2N6282
2N6283 -
-
2N6284
IEBO
Emitter Cutoff
Current
VBE= 5 V, IC= 0
2N6282
2N6283 -
-
2N6284
VCE= 60 V, VBE= -1.5 V 2N6282
VCE= 80 V, VBE= -1.5 V 2N6283 -
-
VCE= 100 V, VBE= -1.5 V 2N6284
ICEX
Collector Cutoff
Current
VCE= 60 V, VBE= -1.5 V
TC = 150°C
2N6282
VCE= 80 V, VBE= -1.5 V
TC = 150°C
2N6283
-
-
VCE= 100 V, VBE= -1.5 V
TC = 150°C
2N6284
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 10 A, IB= 40 mA
2N6282
2N6283 -
2N6284
-
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 20 A, IB= 200 mA
2N6282
2N6283 -
2N6284
-
VBE(SAT)
Base-Emitter
saturation Voltage (*)
IC= 20 A, IB= 200 mA
2N6282
2N6283 -
2N6284
-
VBE
Base-Emitter Voltage
(*)
VCE= 3 V, IC= 10 A
2N6282
2N6283 -
-
2N6284
-
-
V
-
1 mA
2 mA
500 µA
5 mA
2
V
3
V
4
V
2,8 V
04/12/2012
COMSET SEMICONDUCTORS
2/3
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