BAS21S 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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BAS21S Datasheet PDF : 4 Pages
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Typical Characteristics
Forward Characteristics
1000
100
10
1
0.1
0.01
0.0
0.4
0.8
1.2
1.6
2.0
FORWARD VOLTAGE V (V)
F
Reverse Characteristics
1000
Ta=100 oC
100
10
Ta=25 oC
1
0
40
80
120
160
200
REVERSE VOLTAGE V (V)
R
Capacitance Characteristics
1.6
Ta=25℃
f=1MHz
1.4
1.2
1.0
0.8
0.6
0
4
8
12
16
20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
300
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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