BU25H06-E3/P 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

BU25H06-E3/P

Enhanced isoCink+™ Bridge Rectifiers

Vishay Semiconductors 

www.vishay.com

BU25H06-E3, BU25H08-E3

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

Maximum instantaneous forward

voltage per diode (1)

IF = 12.5 A

TA = 25 °C

TA = 125 °C

VF

Maximum reverse current per diode rated VR

TA = 25 °C

TA = 125 °C

IR

Typical junction capacitance per diode 4.0 V, 1 MHz

CJ

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

0.97

0.87

-

120

125

MAX.

1.05

0.95

5.0

350

-

UNIT

V

μA

pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BU25H06

BU25H08

Typical thermal resistance

RJC (1)

2.5

RJA (2)

24

Notes

(1) With 60 W air cooled heatsink

(2) Without heatsink, free air

UNIT

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g) PREFERRED PACKAGE CODE

BU25H06-E3/P

4.84

P

BU25H06-E3/A

4.84

A

BASE QUANTITY

20

250

DELIVERY MODE

Tube

Paper tray

Revision: 08-Apr-16

2

Document Number: 87650

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: