BC817-16 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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BC817-16 Datasheet PDF : 4 Pages
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Typical Characteristics
280
240
200
160
120
80
40
0
0
1.2
1.0
Static Characteristic
1mA COMMON
0.9mA EMITTER
0.8mA Ta=25℃
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
IB=0.1mA
2
4
6
8
10
12
14
16
COLLECTOR-EMITTER VOLTAGE VCE (V)
VBEsat —— IC
β=10
0.8
Ta=25℃
0.6
Ta=100℃
0.4
0.2
0.1
500
100
1
10
100
500
COLLECTOR CURRENT IC (mA)
IC —— VBE
10
Ta=100 oC
1
Ta=25℃
0.1
0.3
300
VCE=1V
0.4
0.5
0.6
0.7
0.8
0.9
1.0
BASE-EMITTER VOLTAGE VBE(V)
fT —— IC
500
400
Ta=100 oC
hFE —— IC
300
Ta=25 oC
200
100
1
0.4
0.3
0.2
0.1
0.0
0.1
100
50
10
1
0
0.4
VCE= 1V
10
100
500
COLLECTOR CURRENT IC (mA)
VCEsat —— IC
β=10
Ta=100℃
Ta=25℃
1
10
100
500
COLLECTOR CURRENT IC (mA)
Cob / Cib —— VCB / VEB
f=1MHz
IE=0 / IC=0
Ta=25 oC
Cib
Cob
5
10
REVERSE VOLTAGE V (V)
Pc —— Ta
0.3
100
0.2
0.1
VCE=5V
Ta=25 oC
10
0.0
1
10
60
0
25
50
75
100
125
150
COLLECTOR CURRENT IC (mA)
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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