BC817-25 查看數據表（PDF） - Siemens AG

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BC817-25

NPN Silicon AF Transistors

Siemens AG 

BC 817

BC 818

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BC 817

BC 818

Collector-base breakdown voltage

IC = 100 µA

BC 817

BC 818

Emitter-base breakdown voltage, IE = 10 µA

Collector cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

Emitter cutoff current, VEB = 4 V

DC current gain1)

IC = 100 mA; VCE = 1 V

BC 817-16, BC 818-16

BC 817-25, BC 818-25

BC 817-40, BC 818-40

IC = 300 mA; VCE = 1 V

BC 817-16, BC 818-16

BC 817-25, BC 818-25

BC 817-40, BC 818-40

Collector-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

Base-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

V(BR)CE0

V

45

–

–

25

–

–

V(BR)CB0

50

–

30

–

V(BR)EB0 5

–

ICB0

–

–

–

–

IEB0

–

–

hFE

–

–

–

100 nA

50

µA

100 nA

–

100 160 250

160 250 400

250 350 630

VCEsat

60

–

100 –

170 –

–

–

–

–

–

0.7 V

VBEsat

–

–

2

AC characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

Input capacitance

VEB = 0.5 V, f = 1 MHz

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

fT

–

Cobo

–

Cibo

–

170 –

6

–

60 –

MHz

pF

Semiconductor Group

3

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