1N4448 查看數據表（PDF） - First Components International
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1N4448 Datasheet PDF : 2 Pages
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Data Sheet
Description
500 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
DO-35 (Glass)
Dimensions in inches(mm)
Features
■ Silicon Epitaxial Planar Diode
■ 500mW Power Dissipation
■ Pb Free product are Available
■ Bulk--2K, 13" T/R--10K, T/B--5K Ammo Box
Mechanical Data
■ Case: DO-35 Glass
■ Terminals: Solderable per
MIL-STD-202E Method 208
■ Polarity: Cathode Band
■ Weight: 0.13grams
Max Ratings at Tj=25C Unless Otherwise Specified
Characteristic
Reverse Voltage
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current at t<1s
Power Dissipation Derate above at 25C
Storage Temp. Range
Junction Temp. Range
Max Forward Voltage @ If=10mA ---1N4148
If=100mA--1N4448
Reverse Voltage Leakage Current Vr=20V
Vr=75V
Vr=25V at Tj=150C
Reerse Breakdown Voltage tested width 100uA
Voltage rise when switching on tseted with 50mA
pulses tp=0.1us, rise time<30ns, fp=5~100kHz
Recerse Recovery Time
Capacitance at VF=VR=0
Max Thermal Resistance Junction to Ambient Air
* lead lept at ambient temp. at 8mm length
Syb
Vr
VRM
IF(AV)
IFSM
Pd
Ts
Tj
VF
Ir
Vbr
Vfr
trr
Ctot
Rthja
1N4148/1N4448
75
100
150
500
500
-55~+200
200
1.0 max
25
5
50
100 min.
2.5 max.
4 max.
4
350
Unit
V
V
mA
mA
mW
C
C
V
uA
V
V
nS
pF
k/W
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