2SC4416 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SC4416

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4416

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

25

V

13

V

3

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation

voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Conversion gain

Symbol Min

V(BR)CBO

25

I CBO

—

I CEO

—

I EBO

—

VCE(sat)

—

hFE

50

Cob

—

fT

3.0

CG

15

Noise figure

Note: Marking is “XB–”.

NF

—

Typ Max Unit

—

—

V

—

0.1 µA

—

10

µA

—

0.3 µA

—

0.3 V

—

180

0.85 1.3

3.8 —

19

—

pF

GHz

dB

8

1.2 dB

Test conditions

IC = 10 µA, IE = 0

VCB = 15 V, IE = 0

VCB = 13 V, RBE = ∞

VEB = 3 V, IC = 0

IC = 20 mA, IB = 4 mA

VCE = 5 V, IC = 5 mA

VCB = 10 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 20 mA

VCC = 5 V, IC = 0.8 mA,

fin = 900 MHz,

fOSC = 930 MHz (–5dBm),

fout = 30 MHz

2

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