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MBR10100 查看數據表(PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

零件编号
产品描述 (功能)
生产厂家
MBR10100
SMC
Sangdest Microelectronic (Nanjing) Co., Ltd SMC
MBR10100 Datasheet PDF : 5 Pages
1 2 3 4 5
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0751, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
*
Max. Reverse Current*
Max. Voltage Rate of
Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
dv/dt
Condition
@ 10 A, Pulse, TJ = 25 °C
@ 10 A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
-
MBR10100
MBRB10100
Green Products
Max.
0.85
0.70
1.0
6
10,000
Units
V
V
mA
mA
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance, Case to
HeatSink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
RθCS
wt
Condition
-
-
Specification
-55 to +150
-55 to +150
DC operation
2.0
Mounting surface, smooth and
greased
0.50
(only for TO-220)
-
2
TO-220AC/D2PAK
Units
°C
°C
°C/W
°C/W
g
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

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