MBRH10100 查看數據表（PDF） - Nell Semiconductor Co., Ltd
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MBRH10100 Datasheet PDF : 5 Pages
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SEMICONDUCTOR
Fig.3 Typical instantaneous forward
characteristics
100
TJ=150°C
10
TJ=125°C
1
TJ=25°C
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
lnstantaneous forward voltage, VF(V)
Fig.5 Typical junction capacitance
10000
1000
TJ=25°C
f = 1.0MHz
Vsig = 50 mVp-p
MBR10100 Series RRooHHSS
Nell Semiconductors
Fig.4 Typical reverse characteristics
100
10
1
TJ=150°C
TJ=125°C
0.1
0.01
TJ=25°C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of rated peak reverse voltage (%)
Fig.6 Typical transient thermal lmpedance
100
10
Junction to case
100
10
1
10
100
Reverse voltage (V)
Fig.7 Typical transient thermal lmpedance
10
1
0.1
0.01
0.001
0.1
Junction to case
MBRF
1
10
100
Pulse duration, t (s)
www.nellsemi.com
Page 3 of 5
1
0.1
0.01
MBR
MBRH
0.1
1
10
100
Pulse duration, t (s)
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