MJ15022 查看數據表（PDF） - New Jersey Semiconductor
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MJ15022 Datasheet PDF : 2 Pages
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NPN-MJ15022, MJ15024*
ELECTRICAL CHARACTERISTICS (Tc = 25=C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(lc = lOOmAdc, IB = 0)
VCEO(SUS)
MJ15022
200
-
MJ 15024
250
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 250 Vdc, VBE(0ff) = 1.5 Vdc)
'CEX
MJ 1 5022
MJ15024
(iAdc
-
250
250
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
(VCE = 200 vdc, IB = 0)
'CEO
MJ 15022
MJ1 5024
iiAdc
: 500
500
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
!EBO
—
500
|.iAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non-repetitive))
(VCE = 80 Vdc, t = 0.5 s (non-repetitive))
's/b
Adc
5
-
2
-
ON CHARACTERISTICS
DC Current Gain
(lc = 8 Adc, VCE = 4 Vdc)
(lc = 16 Adc, VCE = 4 Vdc)
HFE
-
15
60
5
-
Collector-Emitter Saturation Voltage
(lc = 8Adc, IB = 0.8 Adc)
(lc = 16 Adc, IB = 3.2 Adc)
VcE(sat)
Vdc
-
1.4
-
4.0
Base- Emitter On Voltage
(lc = 8 Adc, VCE = 4 Vdc)
vBE(on)
-
2.2
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 1 Adc, VCE = 10 Vdc, f,est = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%.
fT
4
—
MHz
Cob
"
500
PF
100
50
1 20
^ 10
TC
- *\M
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v
_
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- T HERU1AL LIM IT/VTIC N
( 5INGL EPULS E
-
b ECOI>IDBREW D0\<VN
L MITE D
IpHf
\2
0.1 0.2 0.5 10 20
50 100
\
250 500 1 k
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active-Region Safe Operating Area
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate lc - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistormust not be subjected to greater
dissipation than the curves indicate.
The data of Figure I is based on Tj(pk) = 200°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
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