B1284 查看數據表（PDF） - Inchange Semiconductor

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B1284

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION

·High DC C urrent Gain-

: hFE= 1500(Min.)@IC= -5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -100V(Min.)

·Low Collector Saturation Voltage

: VCE(sat)= -1.5V(Max)@IC= -5A

APPLICATIONS

·High power switching applications.

·Hammer drive, pulse motor drive applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-100

V

VEBO Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IB

Base Current-Continuous

-0.8

A

IBM

Base Current-Peak

Total Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

-1.5

A

35

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

3.57 ℃/W

isc website：www.iscsemi.cn

1

Product Specification

2SB1284

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