MX25L6445EM2 查看數據表（PDF） - Macronix International

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MX25L6445EM2

64M-BIT [x 1/x 2/x 4] CMOS MXSMIO™ (SERIAL MULTI I/O) FLASH MEMORY

Macronix International 

MX25L6445E

64M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY

FEATURES

GENERAL

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3

• 64Mb: 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/

O mode) structure

• 2048 Equal Sectors with 4K bytes each

- Any Sector can be erased individually

• 256 Equal Blocks with 32K bytes each

- Any Block can be erased individually

• 128 Equal Blocks with 64K bytes each

- Any Block can be erased individually

• Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE

• High Performance

VCC = 2.7~3.6V

- Normal read

- 50MHz

- Fast read (Normal Serial Mode)

- 1 I/O: 104MHz with 8 dummy cycles

- 2 I/O: 70MHz with 4 dummy cycles

- 4 I/O: 70MHz with 6 dummy cycles

- Fast read (Double Transfer Rate Mode)

- 1 I/O: 50MHz with 6 dummy cycles

- 2 I/O: 50MHz with 6 dummy cycles

- 4 I/O: 50MHz with 8 dummy cycles

- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)

- Byte program time: 9us (typical)

- Continuously Program mode (automatically increase address under word program mode)

- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 50s(typ.) /chip

• Low Power Consumption

- Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz

- Low active programming current: 25mA (max.)

- Low active erase current: 25mA (max.)

- Low standby current: 50uA (max.)

- Deep power down current: 20uA (max.)

• Typical 100,000 erase/program cycles

• 20 years data retention

SOFTWARE FEATURES

• Input Data Format

- 1-byte Command code

P/N: PM1736

REV. 1.8, DEC. 26, 2011

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