DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CM600HU-12H 查看數據表(PDF) - Powerex

零件编号
产品描述 (功能)
生产厂家
CM600HU-12H Datasheet PDF : 4 Pages
1 2 3 4
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HU-12H
Single IGBTMOD™ U-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M8 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
-40 to 150
-40 to 125
600
±20
600
1200*
600
1200*
1560
95
Mounting Torque, M6 Mounting
40
Mounting Torque, M4 Terminal
15
Weight
450
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 60mA, VCE = 10V
IC = 600A, VGE = 15V, Tj = 25°C
IC = 600A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 600A, VGE = 15V
IE = 600A, VGE = 0V
4.5
6
2.4
2.6
1200
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 300V, IC = 600A,
VGE1 = VGE2 = 15V,
RG = 1.0, Resistive
Load Switching Operation
IE = 600A, diE/dt = -1200A/µs
IE = 600A, diE/dt = -1200A/µs
1.44
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT Module
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi Module
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
4
Typ.
0.02
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Max.
1
0.5
7.5
3.0
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Max.
52.8
28.8
7.8
300
600
350
350
160
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Max.
0.08
0.12
Units
°C/ W
°C/W
°C/W

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]