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STW81103AT 查看數據表(PDF) - STMicroelectronics

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STW81103AT Datasheet PDF : 53 Pages
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STW81103
Multi-band RF frequency synthesizer with integrated VCOs
Features
Integer-N frequency synthesizer
Dual differential integrated VCOs with
automatic center frequency calibration:
– 2500 - 3050 MHz (direct output)
– 4350 - 5000 MHz (direct output)
– 1250 - 1525 MHz (internal divider by 2)
– 2175 - 2500 MHz (internal divider by 2)
– 625 - 762.5 MHz (internal divider by 4)
– 1087.5 - 1250 MHz (internal divider by 4)
Excellent integrated phase noise
Fast lock time: 150µs
Dual modulus programmable prescaler
(16/17 or 19/20)
2 programmable counters to achieve a
feedback division ratio from 256 to 65551
(prescaler 16/17) and from 361 to 77836
(prescaler 19/20).
Programmable reference frequency divider
(10 bits)
Phase frequency comparator and charge pump
Programmable charge pump current
Digital lock detector
Dual digital bus interface: SPI and I2C bus (fast
mode) with 3 bit programmable address
(1100A2A1A0)
3.3 V power supply
Power down mode (hardware and software)
Small size exposed pad VFQFPN28 package
5 mm x 5 mm x 1.0 mm
Process: BICMOS 0.35 µm SiGe
Applications
2.5G and 3G Cellular infrastructure equipment
CATV equipment
Instrumentation and test equipment
Other wireless communication systems
Description
The STMicroelectronics STW81103 is an
integrated RF synthesizer with voltage controlled
oscillators (VCOs). Showing high performance,
high integration, low power, and multi-band
performances, STW81103 is a low cost one chip
alternative to discrete PLL and VCOs solutions.
STW81103 includes an Integer-N frequency
synthesizer and two fully integrated VCOs
featuring low phase noise performance and a
noise floor of -155dBc/Hz. The combination of
wide frequency range VCOs (thanks to center-
frequency calibration over 32 sub-bands) and
multiple output options (direct output, divided by 2
or divided by 4) allows to cover the
625 MHz-762.5 MHz, the 1087.5 MHz-1525 MHz,
the 2175 MHz-3050 MHz and the
4350 MHz-5000 MHz bands.
The STW81103 is designed with
STMicroelectronics advanced 0.35 µm SiGe
process.
March 2008
Rev 3
1/53
www.st.com
1

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