BTS410F2 查看數據表（PDF） - Siemens AG
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BTS410F2 Datasheet PDF : 13 Pages
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BTS 410 F2
Terms
Ibb
3
I IN
IN
Vbb
2
IL
I ST
PROFET
OUT
5
ST
4
V IN VST
GND
Vbb
1 IGND
R GND
VON
VOUT
Short circuit detection
Fault Condition: VON > 8.5 V typ.; IN high
+ Vbb
Logic
unit
Short circuit
detection
V
ON
OUT
Input circuit (ESD protection)
IN
RI
Inductive and overvoltage output clamp
+ Vbb
VZ
ESD-
ZDI1 ZDI2
II
GND
GND
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
VON clamped to 68 V typ.
to 1 V).
VON
OUT
PROFET
Status output
Overvolt. and reverse batt. protection
+ Vbb
+5V
R IN IN
V Z2
R ST(ON)
ST
R ST ST
Logic
GND
ESD-
ZD
V Z1
PROFET
R GND
GND
ESD-Zener diode: 6 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Signal GND
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 Ω, RIN,
RST= 15 kΩ
Semiconductor Group
6
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